| PART |
Description |
Maker |
| AN126 |
DRX Technology: A Cirrus Logic Development to Enhance Digital Images
From old datasheet system
|
Cirrus Logic
|
| PSMN3R7-30YLC |
N-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors N.V.
|
| PHP191NQ06LT PHB191NQ06LT |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
PHP/PHB191NQ06LT; N-channel Trenchmos (tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN3R0-30YLD-15 |
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
|
NXP Semiconductors
|
| PSMN1R6-40YLC |
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors
|
| PSMN010-25YLC NXPSEMICONDUCTORSN.V.-PSMN010-25YLC |
N-channel 25 V 10.6 m logic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors N.V.
|
| PSMN011-30YLC |
N-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors N.V.
|
| PSMN7R5-25YLC |
N-channel 25 V 7.4 mΩ logic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors
|
| PSMN4R0-30YLD |
N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
|
NXP Semiconductors
|
| IRLR024NTRPBF IRLR024NPBF IRLR024NPBF-15 |
Advanced Process Technology
Logic-Level Gate Drive
|
International Rectifier
|
| PSMN3R2-25YLC |
N-channel 25 V 3.4 m logic level MOSFET in LFPAK using NextPower technology
N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors N.V.
|
| PSMN1R2-25YLC PSMN1R2-25YLC-15 |
N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technology
N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors N.V.
|
